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IXFN70N60Q2
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B Outline
g fs
V DS = 10 V; I D = 0.5 ? I D25
Note 1
36
50
S
C iss
7200
pF
C oss
C rss
t d(on)
V GS = 0 V, V DS = 25 V, f = 1 MHz
1300
290
26
pF
pF
ns
t r
t d(off)
t f
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 ? (External)
25
60
12
ns
ns
ns
M4 screws (4x) supplied
Dim. Millimeter
Min. Max.
Inches
Min. Max.
Q G(on)
Q GS
Q GD
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
265
57
120
nC
nC
nC
A
B
C
D
E
F
31.50
7.80
4.09
4.09
4.09
14.91
31.88
8.20
4.29
4.29
4.29
15.11
1.240
0.307
0.161
0.161
0.161
0.587
1.255
0.323
0.169
0.169
0.169
0.595
G
30.12
30.30
1.186
1.193
R thJC
R thCK
0.05
0.14
K/W
K/W
H
J
K
L
38.00
11.68
8.92
0.76
38.23
12.22
9.60
0.84
1.496
0.460
0.351
0.030
1.505
0.481
0.378
0.033
M
N
O
12.60
25.15
1.98
12.85
25.42
2.13
0.496
0.990
0.078
0.506
1.001
0.084
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
P
Q
R
S
T
4.95
26.54
3.94
4.72
24.59
5.97
26.90
4.42
4.85
25.07
0.195
1.045
0.155
0.186
0.968
0.235
1.059
0.174
0.191
0.987
I S
V GS = 0 V
70
A
U
-0.05
0.1
-0.002
0.004
I SM
V SD
Repetitive;
pulse width limited by T JM
I F = I S , V GS = 0 V, Note 1
280
1.5
A
V
t rr
Q RM
I RM
I F = 25A
-di/dt = 100 A/ μ s
V R = 100 V
1.2
8
250
ns
μ C
A
Note: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
6,404,065B1
6,259,123B1
6,162,665
6,306,728B1
6,534,343
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